33
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
34
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
32
R G = 3.3 ?
33
R G = 3.3 ?
31
30
V GS = 10V
V DS = 50V
32
31
V GS = 10V
V DS = 50V
T J = 25oC
29
28
I
D
= 50A
30
29
28
27
27
26
26
T J = 125oC
25
I
D
= 25A
25
24
23
22
24
23
22
25
35
45
55
65
75
85
95
105
115
125
24
26
28
30
32
34
36
38
40
42
44
46
48
50
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
220
85
42
75
200
180
160
140
120
100
80
60
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 50V
I D = 50A
I D = 25A
80
75
70
65
60
55
50
45
40
38
36
34
32
t f t d(off) - - - -
R G = 3.3 ? , V GS = 10V
V DS = 50V
I D = 25A
I D = 50A
70
65
60
55
50
40
20
0
40
35
30
30
28
45
40
2
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
38
80
200
300
37
36
T J = 125oC
t f t d(off) - - - -
R G = 3.3 ? , V GS = 10V
V DS = 50V
75
70
180
160
t f t d(off) - - - -
T J = 125oC, V GS = 10V
V DS = 50V
275
250
140
225
35
65
120
200
34
T J = 25oC
60
100
I D = 25A
175
33
T J = 25oC
55
80
I
D
= 50A
150
32
50
60
40
125
100
31
30
T J = 125oC
45
40
20
0
75
50
24
26
28
30
32
34
36
38
40
42
44
46
48
50
2
4
6
8
10
12
14
16
18
20
I D - Amperes
? 2009 IXYS CORPORATION, All Rights Reserved
R G - Ohms
IXYS REF: T_200N10T(6V)9-30-08-D
相关PDF资料
IXTF230N085T MOSFET N-CH 85V 130A ISOPLUS I4
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